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Same model may have multiple batches, images only for reference.
IXFP7N100P Real Image
Same model may have multiple batches, images only for reference.

IXFP7N100P

Part No IXFP7N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Polar HiPerFET Power MOSFET
Datasheet
IXFP7N100P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET, PolarP2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 6V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 47nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2590pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 1.9 Ohm @ 3.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1191128-IXFP7N100P
Manufacturer Homepage www.ixys.com
Family Name IXFP7N100P
Introduction Date October 29, 2009
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXFP7N100P CAD Model

Description

The IXFP7N100P is an N-channel MOSFET transistor designed for use in electronic circuits that require high power and high voltage.

  • Maximum Drain-Source Voltage: 1000V
  • Maximum Continuous Drain Current: 7A
  • Package: TO-220-3 package
  • Mounting: through-hole
  • Maximum Gate Charge: 47nC @ 10V
  • Suitable for: industrial and automotive applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.5949 $50.3541
22+ $4.5907 $100.9954
34+ $4.4473 $151.2082
47+ $4.3038 $202.2786
61+ $4.1604 $253.7844
81+ $3.7300 $302.1300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 339 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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