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Same model may have multiple batches, images only for reference.
IXFR36N50P Real Image
Same model may have multiple batches, images only for reference.

IXFR36N50P

Part No IXFR36N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 19A ISOPLUS247
Datasheet
IXFR36N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package ISOPLUS247
Dimension ISOPLUS247
Win Source Part Number 205689-IXFR36N50P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFR36N50P CAD Model

Description

The IXFR36N50P is an N-channel MOSFET manufactured by IXYS.

  • Supply and Demand Status: Limited
  • Maximum Power Dissipation: 156W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Commonly Used In: Power electronics

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.3920 $59.1360
20+ $6.0661 $121.3220
30+ $5.8766 $176.2980
41+ $5.6861 $233.1301
53+ $5.4966 $291.3198
71+ $4.9284 $349.9164
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Availability: 9,800 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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