The IXFT32N50Q is a MOSFET transistor from IXYS.

• Series: It is a part of the HiPerFET series and comes in TO-268-3, D3Pak (2 Leads + Tab), TO-268AA package.
• Vds: The transistor has a maximum drain-source voltage of 500V.
• Id: It has a continuous drain current of 32A @ 25°C.
• Qg: The gate charge is 190nC @ a drive voltage of 10V.
• Power Dissipation: The maximum power dissipation of the transistor is 360W @ Tc.
• Channel Type: It has a channel type of N.
• Vgs: It has a maximum Vgs of ±20V.
• Rds On: The Rds On is 160 mOhm @ 16A and 10V.
• Application: The transistor is suitable for use in discrete semiconductor products.
• Compliance: The product is RoHS compliant and has an ECCN of EAR99.
• EOL Date: The estimated EOL date of the transistor is obsolete.