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Same model may have multiple batches, images only for reference.
IXFX32N50Q Real Image
Same model may have multiple batches, images only for reference.

IXFX32N50Q

Part No IXFX32N50Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 32A PLUS247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 4mA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 3950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 416W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS247-3
Dimension TO-247-3
Win Source Part Number 139637-IXFX32N50Q
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFX32N50Q CAD Model

Description

The IXYS IXFX32N50Q MOSFET is an N-channel power transistor that is designed for use in electronic devices that require high power dissipation.

  • Maximum Power Dissipation: 416W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 32A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 4mA
  • Maximum Gate Charge: 150nC @ 10V
  • Maximum Input Capacitance: 3950pF @ 25V
  • Mounting: Through-hole
  • Category: Discrete semiconductor products
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.8752 $64.3760
11+ $10.5643 $116.2073
17+ $10.2342 $173.9814
24+ $9.9041 $237.6984
31+ $9.5739 $296.7909
41+ $8.5835 $351.9235
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Availability: 4,100 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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