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Same model may have multiple batches, images only for reference.
IRF7834TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7834TRPBF

Part No IRF7834TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 19A 8-SOIC
Datasheet
IRF7834TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 3710pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001960-IRF7834TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7834TRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel transistor with a 8-SO package.

  • Polarity: N-Channel
  • Package: 8-SO
  • Drive Voltage: 4.5V, 10V
  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 19A (Ta)
  • Rds On (Maximum) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
  • Gate-Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 3710pF @ 15V
  • Gate Charge (Qg) (Maximum) @ Vgs: 44nC @ 4.5V
  • Features: Commonly used and halogen free

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0355 $62.1300
140+ $0.8496 $118.9440
215+ $0.8232 $176.9880
290+ $0.7966 $231.0140
375+ $0.7701 $288.7875
505+ $0.6904 $348.6520
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Availability: 4,688 pieces
MOQ: 60 pcs
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