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Same model may have multiple batches, images only for reference.
IXFX90N30 Real Image
Same model may have multiple batches, images only for reference.

IXFX90N30

Part No IXFX90N30
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 90A PLUS247
Datasheet
IXFX90N30 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 8mA
Max Gate Charge 360nC @ 10V
Max Input Capacitance 10000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 560W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PLUS247-3
Dimension TO-247-3
Win Source Part Number 1049547-IXFX90N30
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFX90N30 CAD Model

Description

The IXYS 468257 is an N-Channel MOSFET that is designed to handle continuous drain current up to 90A and drain-source breakdown voltage up to 300V.

  • Continuous Drain Current: 90A
  • Drain-Source Breakdown Voltage: 300V
  • On Resistance: 33 mOhm @ 45A and 10V gate-source voltage
  • Input Voltage: 10V
  • Maximum Power Dissipation: 560W (Tc)
  • Package: PLUS247-3
  • Mounting: Through-hole
  • Applications: Power supplies, motor control, and inverters

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