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Same model may have multiple batches, images only for reference.
IXFY36N20X3
Same model may have multiple batches, images only for reference.

IXFY36N20X3

Part No IXFY36N20X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 36A TO252AA / N-Channel 200 V 36A (Tc) 176W (Tc) Surface Mount TO-252AA
Datasheet
IXFY36N20X3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1425 pF @ 25 V
FET Feature -
Power Dissipation (Max) 176W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IXFY36
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355075-IXFY36N20X3
Ultra Librarian 3D Model Ultra Librarian IXFY36N20X3 CAD Model

Description

The IXFY36N20X3 is a single N-channel MOSFET transistor from the HiPerFET™, Ultra X3 series manufactured by IXYS.

  • Product Category: Discrete Semiconductor Products
  • Transistor Type: MOSFET
  • Transistor Polarity: N-Channel
  • Technology: Si
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3
  • Drain-Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 36A
  • On Resistance (Rds On): 45mOhm @ 18A, 10V
  • Gate Charge (Qg): 21nC
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C
  • REACH: Unaffected
  • ECCN: EAR99

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