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Same model may have multiple batches, images only for reference.
IXGH30N60C3 Real Image
Same model may have multiple batches, images only for reference.

IXGH30N60C3

Part No IXGH30N60C3
Manufacturer IXYS
Catalog IGBTs - Single
Description GenX3 600V IGBT
Datasheet
IXGH30N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series GenX3
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 150A
Vce(on) (Maximum) @ Vge, Ic 3V @ 15V, 20A
Power - Max 220W
Switching Energy 270μJ (on), 90μJ (off)
Input Type Standard
Gate Charge 38nC
Td (on/off) @ 25°C 16ns/42ns
Test Condition 300V, 20A, 5 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247AD (IXGH)
Win Source Part Number 1191182-IXGH30N60C3
Manufacturer Homepage www.ixys.com
Family Name IXGH30N60C3
Introduction Date November 10, 2008
ECCN EAR99
Estimated EOL Date 2025
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH30N60C3 CAD Model

Description

The IXGH30N60C3 is an IGBT type transistor manufactured by IXYS.

  • Series: GenX3
  • Package: TO-247-3
  • Maximum Power: 220W
  • Collector Current Pulsed: 150A
  • Switching Energy (On): 270μJ
  • Switching Energy (Off): 90μJ
  • Gate Charge: 38nC
  • Breakdown Voltage: 600V
  • Vce(on): 3V @ 15V, 20A
  • Mounting Style: Through-hole
  • Operating Temperature: -55°C to 150°C (TJ)
  • Input Type: Standard
  • Td (on/off) @ 25°C: 16ns/42ns
  • Suitable for: Discrete Semiconductor Products

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