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Same model may have multiple batches, images only for reference.
IXGH32N170A Real Image
Same model may have multiple batches, images only for reference.

IXGH32N170A

Part No IXGH32N170A
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1700V 32A 350W TO247 / IGBT NPT 1700 V 32 A 350 W Through Hole TO-247AD
Datasheet
IXGH32N170A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Package Bulk
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 32 A
Current - Collector Pulsed (Icm) 110 A
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 21A
Power - Max 350 W
Switching Energy 1.5mJ (off)
Input Type Standard
Gate Charge 155 nC
Td (on/off) @ 25°C 46ns/260ns
Test Condition 850V, 32A, 2.7Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH32
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names Q1566877,IXGH32N170A-NDR
Standard Package 30
Win Source Part Number 1066187-IXGH32N170A
Ultra Librarian 3D Model Ultra Librarian IXGH32N170A CAD Model

Description

The IXGH32N170A is an NPT type IGBT transistor from IXYS.

  • Collector-Emitter Breakdown Voltage: 1700V
  • Maximum Collector Current: 32A
  • Vce(on): 5V @ 15V and 21A
  • Gate Charge: 155nC
  • Switching Energy: 1.5mJ (off)
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C (TJ)
  • Ideal for: high voltage and high current applications such as motor control, power supplies, and inverters.
  • Features: fast switching speed and low on-state resistance, ensuring efficient and reliable operation.

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