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Same model may have multiple batches, images only for reference.
IXGT60N60B2 Real Image
Same model may have multiple batches, images only for reference.

IXGT60N60B2

Part No IXGT60N60B2
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 75A 500W TO268  /  IGBT PT 600 V 75 A 500 W Surface Mount TO-268AA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series HiPerFAST™
Package Tube
Product Status Obsolete
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Power - Max 500 W
Switching Energy 1mJ (off)
Input Type Standard
Gate Charge 170 nC
Td (on/off) @ 25°C 28ns/160ns
Test Condition 400V, 50A, 3.3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268AA
Base Product Number IXGT60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 992494-IXGT60N60B2
Ultra Librarian 3D Model Ultra Librarian IXGT60N60B2 CAD Model

Description

The IXYS IXGT60N60B2 is a TO-268-3 packaged IGBT transistor with a maximum power rating of 500W and a collector current rating of 75A.

  • Breakdown Voltage: 600V
  • On-State Voltage: 1.8V @ 50A
  • Switching Energy: 1mJ
  • Gate Charge: 170nC
  • Turn-Off Time: 160ns @ 25°C
  • Turn-On Time: 28ns @ 25°C
  • Operating Temperature: -55°C to 150°C
  • Suitable for: high power switching applications, power supplies, and motor control
  • Status: now obsolete

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