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Same model may have multiple batches, images only for reference.
IXSH25N120AU1 Real Image
Same model may have multiple batches, images only for reference.

IXSH25N120AU1

Part No IXSH25N120AU1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 50A 200W TO247
Datasheet
IXSH25N120AU1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 4V @ 15V, 25A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 9.6mJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 100ns/450ns
Testing Conditions 960V, 25A, 18 Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049699-IXSH25N120AU1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXSH25N120AU1 CAD Model

Description

IXSH25N120AU1 is a N-Channel MOSFET manufactured by IXYS.

  • Maximum Power Dissipation: 200W
  • Maximum Current Collector: 50A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Collector-Emitter Saturation Voltage (Max): 4V @ 15V, 25A
  • Package: TO-247AD (IXSH) package
  • Mounting: through a hole
  • Supply and Demand: sufficient

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13+ $9.0552 $117.7176
20+ $8.7722 $175.4440
28+ $8.4893 $237.7004
36+ $8.2063 $295.4268
48+ $7.3574 $353.1552
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Availability: 32,500 pieces
MOQ: 6 pcs
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