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Same model may have multiple batches, images only for reference.
IXSH35N120B Real Image
Same model may have multiple batches, images only for reference.

IXSH35N120B

Part No IXSH35N120B
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 70A 300W TO247 / Trans IGBT Chip N-CH 1200V 70A 300000mW 3-Pin(3+Tab) TO-247AD
Datasheet
IXSH35N120B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 140A
Vce(on) (Maximum) @ Vge, Ic 3.6V @ 15V, 35A
Power - Max 300W
Switching Energy 5mJ (off)
Input Type Standard
Gate Charge 120nC
Td (on/off) @ 25°C 36ns/160ns
Test Condition 960V, 35A, 5 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247AD (IXSH)
Win Source Part Number 777637-IXSH35N120B
Popularity Medium
Supply and Demand Status Limited
Family Name IXSH 35N120B
Introduction Date September 19, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IXSH35N120B CAD Model

Description

The IXYS IXSH35N120B is a TO-247-3 packaged IGBT transistor manufactured by IXYS.

  • Maximum Power Rating: 300W
  • Collector Current Rating: 70A
  • Breakdown Voltage: 1200V
  • On-State Voltage: 3.6V @ 35A
  • Switching Energy: 5mJ
  • Gate Charge: 120nC
  • Turn-Off Time: 160ns
  • Turn-On Time @ 25°C: 36ns
  • Temperature Range: -55°C to 150°C

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