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Same model may have multiple batches, images only for reference.
IXTA18P10T Real Image
Same model may have multiple batches, images only for reference.

IXTA18P10T

Part No IXTA18P10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 18A TO-263
Datasheet
IXTA18P10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 2100pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (IXTA)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1049723-IXTA18P10T
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTA18P10T CAD Model

Description

The IXTA18P10T MOSFET is a P-channel power transistor designed for use in a wide range of applications.

  • Maximum Power Dissipation: 83W @ a case temperature of 25°C
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 18A @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 120 mOhm @ 9A and 10V
  • Maximum Input Capacitance: 2100pF @ 25V
  • Maximum Gate-Source Voltage: ±15V
  • Package: TO-263
  • Packaging: Tube/Rail
  • Status: Active
  • Category: Discrete Semiconductor Products

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78+ $3.8806 $302.6868
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Availability: 1,300 pieces
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