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IXTA76N075T

Part No IXTA76N075T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 76A TO-263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 2580pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 176W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (IXTA)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1049744-IXTA76N075T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTA76N075T CAD Model

Description

The IXYS IXTA76N075T is an N-channel MOSFET with a drain-source breakdown voltage of 75V and a continuous drain current of 76A (Tc).

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 76A (Tc)
  • Maximum Rds On: 12 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 2580pF @ 25V
  • Maximum Gate Charge: 57nC @ 10V
  • Package: TO-263 (IXTA)
  • Power Dissipation: 176W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Dimension of the Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,999 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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