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IXTA86N20T-TRL

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IXTA86N20T-TRL
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 200V 86A TO263 / N-Channel 200 V 86A (Tc) 550W (Tc) Surface Mount TO-263 (D2Pak)
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Trench
Package	Tape & Reel
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	33mOhm @ 43A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	550W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	IXTA86
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1355072-IXTA86N20T-TRL
Ultra Librarian 3D Model	Ultra Librarian IXTA86N20T-TRL CAD Model

Alternative Products

Description

The IXTA86N20T-TRL is an N-Channel MOSFET transistor designed for various applications and manufactured by IXYS.

FET Type: N-Channel
Vdss - Drain-to-Source Voltage: 200V
Id - Continuous Drain Current: 86A
Rds On - On-Resistance: 33mOhm
Operating Temperature: -55°C to 175°C
Package / Case: TO-263-3, D²Pak

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IXTA86N20T-TRL

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