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IXTA90N055T2

Part No IXTA90N055T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 90A TO263 / N-Channel 55 V 90A (Tc) 150W (Tc) Surface Mount TO-263AA
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchT2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA90
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346846-IXTA90N055T2
Ultra Librarian 3D Model Ultra Librarian IXTA90N055T2 CAD Model

Description

The IXTA90N055T2 MOSFET is a single N-channel FET type with a drain to source voltage (Vdss) of 55V and a power dissipation (Max) of 150W (Tc).

  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10V
  • Mounting Technology: Surface mount
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • ECCN: EAR99 compliant
  • Manufacturer: IXYS

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8209 $52.3881
21+ $4.7762 $100.3002
33+ $4.6269 $152.6877
45+ $4.4777 $201.4965
58+ $4.3284 $251.0472
78+ $3.8806 $302.6868
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Availability: 5,251 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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