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IXTB62N50L

Name: IXTB62N50L
Brand: IXYS
SKU: 1346709
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTB62N50L
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 62A PLUS264 / N-Channel 500 V 62A (Tc) 800W (Tc) Through Hole PLUS264™
Datasheet	IXTB62N50L Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Linear
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 31A, 20V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	550 nC @ 20 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	11500 pF @ 25 V
Power Dissipation (Max)	800W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXTB62
Standard Package	25
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346709-IXTB62N50L
Ultra Librarian 3D Model	Ultra Librarian IXTB62N50L CAD Model

Alternative Products

Description

The IXTB62N50L is an N-Channel MOSFET transistor from IXYS.

Series: Linear
Suitable for: discrete semiconductor products such as FETs, MOSFETs, and single FETs
Maximum Power Dissipation: 800W (Tc)
Drain-to-Source Voltage (Vdss): 500V
Applications: through-hole
Package: TO-264-3, TO-264AA
Maximum Gate-Source Voltage (Vgs): ±30V
Operating Temperature Range: -55°C ~ 150°C (TJ)
Current-continuous drain (Id): 62A (Tc)
Maximum on-resistance (Rds On): 100mOhm @ 31A, 20V
Gate charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V

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