The IXTC180N085T is a MOSFET (Metal Oxide) N-Channel FET type transistor designed for use in discrete semiconductor products.

• Drain to Source Voltage (Vdss): 85V
• Power Dissipation (Max): 150W (Tc)
• Mounting Type: Through hole
• Package / Case: ISOPLUS220™
• Supplier Device Package: ISOPLUS220™
• Vgs (Max): ±20V
• Temperature Range: -55°C ~ 175°C (TJ)
• ECCN: EAR99
• MSL Level: 1 (unlimited)
• REACH Status: REACH unaffected
• HTSUS: 8541.29.0095
• Manufacturer: IXYS
• Base Product Number: IXTC180
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V