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IXTD2N60P-1J

Part No IXTD2N60P-1J
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2A DIE / N-Channel 600 V 2A (Tc) 56W (Tc) Surface Mount Die
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V
Power Dissipation (Max) 56W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Base Product Number IXTD2N
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346768-IXTD2N60P-1J
Ultra Librarian 3D Model Ultra Librarian IXTD2N60P-1J CAD Model

Description

IXTD2N60P-1J is a MOSFET transistor manufactured by IXYS.

  • FET Type: MOSFET
  • Channel Type: N-Channel
  • Series: PolarHV™
  • Suitable for: discrete semiconductor products
  • Drain to Source Voltage: 600V
  • Power Dissipation (max): 56W (Tc)
  • Package/Case: Die
  • Mounting Type: Surface Mount
  • Gate-Source Voltage: ±30V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
  • Status: Obsolete
  • Supply and Demand Status: Limited

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