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IXTD3N50P-2J

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Part No	IXTD3N50P-2J
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 3A DIE / N-Channel 500 V 3A (Tc) 70W (Tc) Surface Mount Die
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	PolarHV™
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	409 pF @ 25 V
Power Dissipation (Max)	70W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
Base Product Number	IXTD3N
Standard Package	1
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346719-IXTD3N50P-2J
Ultra Librarian 3D Model	Ultra Librarian IXTD3N50P-2J CAD Model

Alternative Products

Description

The IXTD3N50P-2J is a N-channel MOSFET (Metal Oxide) from IXYS's PolarHV™ series.

Drain to Source Voltage (Vdss): 500 V
Power Dissipation (Max): 70W (Tc)
Mounting: surface mountable
Package/Case: Die package/case
Vgs (Max): ±30V
Operating Temperature: -55°C to 150°C (TJ)
Status: Obsolete product
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 50μA
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 25 V

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