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IXTE250N10

Part No IXTE250N10
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 250A SOT227B / N-Channel 100 V 250A 730W Chassis Mount SOT-227B
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 250A
Power Dissipation (Max) 730W
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXTE250
Standard Package 10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346781-IXTE250N10
Ultra Librarian 3D Model Ultra Librarian IXTE250N10 CAD Model

Description

The IXTE250N10 is a N-channel MOSFET transistor designed for use in Discrete Semiconductor Products.

  • Manufacturer: IXYS
  • FET Type: MOSFET
  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 100 V
  • Power Dissipation (Max): 730W
  • Mounting Type: Chassis Mount
  • Package: SOT-227-4, miniBLOC
  • Gate to Source Voltage (Vgs): ±20V
  • Operating Temperature Range: Not Specified
  • Current - Continuous Drain (Id): 250A

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