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Same model may have multiple batches, images only for reference.
IXTH02N250 Real Image
Same model may have multiple batches, images only for reference.

IXTH02N250

Part No IXTH02N250
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 2500V 0.2A TO247
Datasheet
IXTH02N250 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 2500V
Continuous Drain Current at 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 7.4nC @ 10V
Max Input Capacitance 116pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 450 Ohm @ 50mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049749-IXTH02N250
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH02N250 CAD Model

Description

The IXTH02N250 is an N-channel MOSFET manufactured by IXYS, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 2500V
  • Continuous Drain Current: 200mA @ 25°C
  • Power Dissipation: 83W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Mounting: through hole
  • Package: TO-247-3 package
  • Supply and Demand: sufficient

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