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IXTH10P60 Real Image

Same model may have multiple batches, images only for reference.

IXTH10P60 Real Image

Same model may have multiple batches, images only for reference.

IXTH10P60

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Part No	IXTH10P60
Manufacturer	IXYS
Catalog	FETs - Single
Description	Standard Power MOSFET \| MOSFET P-CH 600V 10A TO-247AD
Sample
Rohs State
ECAD Module
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Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	P-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	600V
Id - Continuous Drain Current	10A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	1Ohm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id	5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	160nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	4700pF at 25V
Power Dissipation (Maximum)	300W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-247 (IXTH)
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	30
MSL Level	Not Applicable
Win Source Part Number	1191248-IXTH10P60
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXTH10P60 CAD Model

Alternative Products

Description

The IXTH10P60 is a P-channel MOSFET with a continuous drain current of 10A by IXYS.

Voltage Rating: 600V
Package: TO-247-3 package
Maximum Power Dissipation: 300W
Gate-Source Voltage Threshold: 5V @ 250μA
Gate Charge: 160nC @ 10V
Input Capacitance: 4700pF @ 25V
Drive Voltage: 10V to the maximum Rds On and minimum Rds On
Operating Temperature Range: -55°C to 150°C
Ideal for: Use in power supplies, motor drives, and inverters

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
3+	$19.6213	$58.8639
7+	$16.0996	$112.6972
10+	$15.5965	$155.9650
14+	$15.0933	$211.3062
18+	$14.5902	$262.6236
23+	$13.0809	$300.8607

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 110 pieces

MOQ: 3 pcs

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