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Same model may have multiple batches, images only for reference.
IXTH220N075T Real Image
Same model may have multiple batches, images only for reference.

IXTH220N075T

Part No IXTH220N075T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 220A TO-247
Datasheet
IXTH220N075T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 165nC @ 10V
Max Input Capacitance 7700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049785-IXTH220N075T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH220N075T CAD Model

Description

The IXTH220N075T is a N-Channel MOSFET designed by IXYS.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 220A @ 25°C
  • Power Dissipation: 480W (Tc)
  • Drive Voltage: 10V
  • Package: TO-247-3 package
  • Mounting: through hole
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 4.5 mOhm @ 25A, 10V
  • Popularity: medium
  • Supply and Demand: sufficient

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