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IXTH240N055T

Part No IXTH240N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 240A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 7600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049787-IXTH240N055T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH240N055T CAD Model

Description

The IXYS IXTH240N055T is a through-hole mounted N-channel MOSFET with a maximum drain-source breakdown voltage of 55V and a continuous drain current of 240A (Tc).

  • Maximum Power Dissipation: 480W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-247 case
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Input Capacitance: 7600pF @ 25V
  • Maximum Rds On: 3.6 mOhm @ 25A, 10V
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand: sufficient

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