The IXTH32N65X is a N-Channel MOSFET transistor from the Ultra X series.

• Drain to source voltage (Vdss): 650 V
• Continuous drain current (Id): 32A @ 25°C
• Maximum Rds On: 135mOhm @ 16A and 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250μA
• Maximum power dissipation: 500W @ Tc
• Mounting type: through hole
• Package/case: TO-247-3
• Supplier device package: TO-247 (IXTH)
• Gate charge (Qg) (Max): 54 nC @ 10 V
• Input capacitance (Ciss) (Max): 2205 pF @ 25 Vds
• Maximum Vgs: ±30V
• Temperature range: -55°C to 150°C (TJ)
• ECCN: EAR99
• REACH regulations: unaffected by REACH regulations.