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Same model may have multiple batches, images only for reference.
IXTH50N30 Real Image
Same model may have multiple batches, images only for reference.

IXTH50N30

Part No IXTH50N30
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 50A TO-247
Datasheet
IXTH50N30 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 165nC @ 10V
Max Input Capacitance 4400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049818-IXTH50N30
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH50N30 CAD Model

Description

The IXYS IXTH50N30 MOSFET is a high-performance N-Channel transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 400W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Maximum Rds On at Id,Vgs: 65 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 165nC @ 10V
  • Package: TO-247
  • Temperature Range: -55°C to 150°C (TJ)

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