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Same model may have multiple batches, images only for reference.
IXTH52P10P Real Image
Same model may have multiple batches, images only for reference.

IXTH52P10P

Part No IXTH52P10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 52A TO-247
Datasheet
IXTH52P10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2845pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049819-IXTH52P10P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH52P10P CAD Model

Description

The IXYS MOSFET is a P-Channel power MOSFET with a maximum drain-source breakdown voltage of 100V and a continuous drain current of 52A at 25°C.

  • On-Resistance: 50 mOhm @ 500mA and 10V gate-source voltage
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Input Capacitance: 2845pF @ 25V
  • Maximum Gate Charge: 60nC @ 10V
  • Application: discrete semiconductor products where a high power dissipation of up to 300W (Tc) is required
  • Package: TO-247-3
  • Mounting: Through a Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.4048 $50.4288
15+ $6.8962 $103.4430
23+ $6.6807 $153.6561
31+ $6.4652 $200.4212
41+ $6.2497 $256.2377
54+ $5.6032 $302.5728
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MOQ: 6 pcs
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