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Same model may have multiple batches, images only for reference.
IXTH60N15 Real Image
Same model may have multiple batches, images only for reference.

IXTH60N15

Part No IXTH60N15
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 60A TO-247
Datasheet
IXTH60N15 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 275W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049821-IXTH60N15
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH60N15 CAD Model

Description

The IXTH60N15 is a MOSFET manufactured by IXYS.

  • Polarity: N-channel
  • Win Source part number: 1049821-IXTH60N15
  • Maximum Drain-Source Breakdown Voltage: 150V
  • Maximum Continuous Drain Current: 60A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 33 mOhm @ 15A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-247 (IXTH)
  • Dimension: TO-247-3
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 3000pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7771 $62.1023
30+ $3.9201 $117.6030
46+ $3.7976 $174.6896
63+ $3.6752 $231.5376
82+ $3.5528 $291.3296
109+ $3.1855 $347.2195
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Availability: 65,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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