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Same model may have multiple batches, images only for reference.
IXTH64N65X Real Image
Same model may have multiple batches, images only for reference.

IXTH64N65X

Part No IXTH64N65X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 64A TO247 / N-Channel 650 V 64A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
Datasheet
IXTH64N65X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 51mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
Base Product Number IXTH64
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346663-IXTH64N65X
Ultra Librarian 3D Model Ultra Librarian IXTH64N65X CAD Model

Description

The IXTH64N65X from IXYS is an N-Channel MOSFET transistor that can be used in various applications.

  • Series: Ultra X
  • Drain to Source Voltage: 650V
  • Package: TO-247-3
  • Continuous Drain Current: 64A (Tc)
  • Rds On: 51mOhm @ 32A, 10V
  • Application: FET and MOSFET

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