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Same model may have multiple batches, images only for reference.
IXTH6N100D2 Real Image
Same model may have multiple batches, images only for reference.

IXTH6N100D2

Part No IXTH6N100D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 6A TO247
Datasheet
IXTH6N100D2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 6A (Tc)
Max Gate Charge 95nC @ 5V
Max Input Capacitance 2650pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 3A, 0V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049824-IXTH6N100D2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH6N100D2 CAD Model

Description

The IXYS MOSFET is a high-performance N-channel depletion mode FET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current Rating: 6A (Tc) @ 25°C
  • Maximum Gate Charge: 95nC @ 5V
  • Package: TO-247 (IXTH)
  • Dimensions: TO-247-3
  • Maximum Rds On @ Id,Vgs: 2.2 Ohm @ 3A, 0V

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.1647 $66.9882
13+ $9.1609 $119.0917
20+ $8.8746 $177.4920
27+ $8.5883 $231.8841
35+ $8.3021 $290.5735
47+ $7.4432 $349.8304
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Availability: 3,300 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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