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Same model may have multiple batches, images only for reference.
IXTH7P50 Real Image
Same model may have multiple batches, images only for reference.

IXTH7P50

Part No IXTH7P50
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 500V 7A TO-247AD
Datasheet
IXTH7P50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 3400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049836-IXTH7P50
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH7P50 CAD Model

Description

The IXYS 1049836-IXTH7P50 is a through-hole P-channel MOSFET that has a maximum drain-source breakdown voltage of 500V and a maximum continuous drain current of 7A.

  • Maximum Power Dissipation: 180W
  • Maximum Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 130nC @ 10V
  • Maximum Input Capacitance: 3400pF @ 25V
  • Maximum Rds On: 1.5 Ohm @ 500mA and 10V
  • Package: TO-247
  • Temperature Range: -55°C to 150°C
  • Suitable for: power supplies, motor control, and lighting systems

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