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IRLM110ATF

Name: IRLM110ATF
Brand: Fairchild/ON Semiconductor
SKU: 462749
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRLM110ATF
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 1.5A SOT-223
Datasheet	IRLM110ATF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	8nC @ 5V
Max Input Capacitance	235pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.2W (Tc)
Maximum Rds On at Id,Vgs	440 mOhm @ 750mA, 5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SOT-223-4
Dimension	TO-261-4, TO-261AA
Win Source Part Number	1047568-IRLM110ATF
Family Name	IRLM110A
Introduction Date	November 28, 2001
ECCN	EAR99
Halogen Free	Compliant
Estimated EOL Date	Obsolete
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Balance
Application Field	Used in Power Management, Motor Drive & Control, Audio
Ultra Librarian 3D Model	Ultra Librarian IRLM110ATF CAD Model

Alternative Products

Description

The Fairchild/ON Semiconductor IRLM110ATF MOSFET is a N-channel polarity transistor with a maximum drain-source breakdown voltage of 100V and a continuous drain current of 1.5A @ 25°C.

Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 1.5A @ 25°C
Package: SOT-223-4
Gate-Source Threshold Voltage: 2V @ 250μA
Maximum Gate Charge: 8nC @ 5V
Maximum Rds On @ Id,Vgs: 440 mOhm @ 750mA and 5V
Packaging: Reel
Compliance: Halogen-free regulations
Market Status: Common-used part, popular with high demand

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IRLM110ATF

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