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IXTH86N25T

Part No IXTH86N25T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 86A TO247
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Trench
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 37mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5330 pF @ 25 V
Power Dissipation (Max) 540W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
Base Product Number IXTH86
Standard Package 30 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 876133-IXTH86N25T
Ultra Librarian 3D Model Ultra Librarian IXTH86N25T CAD Model

Description

The IXTH86N25T is a N-Channel MOSFET transistor designed for discrete semiconductor applications.

  • Series: part of the Trench series, known for its advanced technology and high-performance characteristics.
  • Drain-to-source voltage (Vdss): 250V
  • Continuous drain current (Id): 86A @ 25°C
  • On-resistance (Rds On): 37mOhm @ 43A and 10V
  • Gate charge (Qg): 105nC @ 10V
  • Input capacitance (Ciss): 5330pF @ 25V
  • Operating temperature range: -55°C to 150°C
  • Power dissipation: 540W
  • Active product: offers reliable performance for various MOSFET applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.4821 $53.7852
28+ $3.6776 $102.9728
43+ $3.5627 $153.1961
59+ $3.4478 $203.4202
76+ $3.3328 $253.2928
101+ $2.9881 $301.7981
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,390 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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