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IXTH88N30P

Name: IXTH88N30P
Brand: IXYS
SKU: 465065
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXTH88N30P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 300V 88A TO-247
Datasheet	IXTH88N30P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	300V
Continuous Drain Current at 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5V @ 250μA
Max Gate Charge	180nC @ 10V
Max Input Capacitance	6300pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	600W (Tc)
Maximum Rds On at Id,Vgs	40 mOhm @ 44A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-247 (IXTH)
Dimension	TO-247-3
Win Source Part Number	1049839-IXTH88N30P
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IXTH88N30P CAD Model

Alternative Products

Description

The IXTH88N30P is a MOSFET manufactured by IXYS.

Maximum Power Dissipation: 600W
Channel Type: N-channel
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current: 88A
On-Resistance: 40 mOhm @ 44A, 10V
Package: TO-247-3
Mounting Type: through hole
Maximum Gate-Source Voltage: +/-20V
Gate-Source Threshold Voltage: 5V @ 250μA
Product Status: active
Popularity: medium
Supply and Demand Status: balanced

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IXTH88N30P

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