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Same model may have multiple batches, images only for reference.
IXTI12N50P Real Image
Same model may have multiple batches, images only for reference.

IXTI12N50P

Part No IXTI12N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO262 / N-Channel 500 V 12A (Tc) 200W (Tc) Through Hole TO-262 (I2PAK)
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1830 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262 (I2PAK)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IXTI12
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346687-IXTI12N50P
Ultra Librarian 3D Model Ultra Librarian IXTI12N50P CAD Model

Description

The IXTI12N50P is an N-channel MOSFET from IXYS. IXTI12N50P IXYS.

  • Discrete Semiconductor Product Use: Discrete semiconductor products
  • Drain-Source Voltage: 500V
  • Continuous Drain Current: 12A @ 25°C
  • Case/Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 200W (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 500mOhm @ 6A and 10V
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Mounting: Through hole
  • Packaging: Tube

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