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Same model may have multiple batches, images only for reference.
IXTK170N10P Real Image
Same model may have multiple batches, images only for reference.

IXTK170N10P

Part No IXTK170N10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170A TO264  /  N-Channel 100 V 170A (Tc) 715W (Tc) Through Hole TO-264 (IXTK)
Datasheet
IXTK170N10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 198 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V
Power Dissipation (Max) 715W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA
Base Product Number IXTK170
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1005832-IXTK170N10P
Ultra Librarian 3D Model Ultra Librarian IXTK170N10P CAD Model

Description

The IXTK170N10P is an N-Channel MOSFET transistor from IXYS that belongs to the Polar series.

  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 170A @ 25°C
  • Maximum On-Resistance: 9mOhm @ 500mA and 10V
  • Gate Threshold Voltage: 5V @ 250μA
  • Gate Charge: 198nC @ 10Vgs
  • Designed for use in: discrete semiconductor products such as transistors, FETs, and MOSFETs
  • Power Dissipation: 715W @ Tc
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: through-hole TO-264-3, TO-264AA with TO-264 (IXTK) supplier device package

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