The IXTK20N150 is a N-Channel MOSFET transistor designed for high voltage applications.

• Drain-source voltage: 1500 V
• Continuous drain current: 20A @ 25°C
• Rds On: 1Ohm @ 10A drain current and 10V gate-source voltage.
• Vgs(th): 4.5V @ 1mA drain current.
• Maximum power dissipation: 1250W
• Mounting: through-hole mounted
• Package: TO-264-3 package
• Gate charge: 215 nC @ 10V gate-source voltage.
• Input capacitance: 7800 pF @ 25V drain-source voltage.
• Operating temperature range: -55°C to 150°C
• Compliant with: REACH regulations.
• Active product: suitable for high voltage electronic applications.