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Same model may have multiple batches, images only for reference.
IXTL2X180N10T
Same model may have multiple batches, images only for reference.

IXTL2X180N10T

Part No IXTL2X180N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 100V 100A I5-PAK / Trans MOSFET N-CH 100V 100A Automotive 5-Pin ISOPLUS I5-PAK
Datasheet
IXTL2X180N10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series Trench
Packaging Tube
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 100A
Rds On (Maximum) @ Id, Vgs 7.4 mOhm @ 50A, 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 151nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6900pF @ 25V
Power - Max 150W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package ISOPLUSi5-Pak
Manufacturer Package ISOPLUSi5-Pak
Win Source Part Number 777656-IXTL2X180N10T
Popularity Medium
Supply and Demand Status Limited
Family Name IXTL2X180N10T
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IXTL2X180N10T CAD Model

Description

The IXYS IXTL2X180N10T is a dual N-channel trench FET manufactured by IXYS.

  • Continuous Drain Current @ 25°C: 100A
  • Maximum Power: 150W
  • Package: ISOPLUSi5-Pak
  • Operating Temperature Range (TJ): -55°C to 175°C
  • Drain-Source Voltage: 100V
  • Gate-Source Threshold Voltage @ 250μA: 4.5V
  • Gate Charge Maximum @ 10V: 151nC
  • Input Capacitance Maximum: 6900pF @ 25Vds
  • Rds on Maximum: 7.4 mOhm @ 50A, 10Vgs
  • Estimated EOL Date: 2029

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