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Same model may have multiple batches, images only for reference.
IPP080N03L G Real Image
Same model may have multiple batches, images only for reference.

IPP080N03L G

Part No IPP080N03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO220-3
Datasheet
IPP080N03L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1900pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 47W (Tc)
Rds On (Maximum) @ Id, Vgs 8 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 776900-IPP080N03L G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP080N03L G CAD Model

Description

The Infineon Technologies IPP080N03L G is a MOSFET transistor with a power maximum of 47W (Tc).

  • Continuous Drain Current: 50A (Tc)
  • Drain-Source Voltage: 30V
  • Gate Charge: 18nC
  • Input Capacitance: 1900pF @ 15V
  • Input Type: N channel
  • Package: TO-220-3
  • Category: Discrete Semiconductor Products
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8724 $61.0680
165+ $0.7159 $118.1235
250+ $0.6935 $173.3750
345+ $0.6711 $231.5295
450+ $0.6488 $291.9600
600+ $0.5817 $349.0200
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Availability: 6,000 pieces
MOQ: 70 pcs
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