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Same model may have multiple batches, images only for reference.
IXTM5N100A
Same model may have multiple batches, images only for reference.

IXTM5N100A

Part No IXTM5N100A
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 5A TO204AA / N-Channel 1000 V 5A (Tc) 180W (Tc) Through Hole TO-204AA (IXTM)
Datasheet
IXTM5N100A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V
Power Dissipation (Max) 180W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AA (IXTM)
Package / Case TO-204AA, TO-3
Base Product Number IXTM5
Standard Package 20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346658-IXTM5N100A
Ultra Librarian 3D Model Ultra Librarian IXTM5N100A CAD Model

Description

The IXYS IXTM5N100A is a N-channel MOSFET transistor from IXYS.

  • Drain to Source Voltage: 1000V
  • Power Dissipation: 180W (Tc)
  • Mounting: through-hole mounting
  • Package: TO-204AA, TO-3 package
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Current-Continuous Drain: 5A (Tc)
  • Maximum On-Resistance: 2Ohm @ 2.5A and 10V
  • Reliable and Efficient Choice: for various applications in the field of Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs.

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