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Same model may have multiple batches, images only for reference.
IXTN30N100L Real Image
Same model may have multiple batches, images only for reference.

IXTN30N100L

Part No IXTN30N100L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 30A SOT227B / N-Channel 1000 V 30A (Tc) 800W (Tc) Chassis Mount SOT-227B
Datasheet
IXTN30N100L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 450mOhm @ 15A, 20V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 545 nC @ 20 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 13700 pF @ 25 V
Power Dissipation (Max) 800W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN30
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number Q3424174
Standard Package 10
Win Source Part Number 1324366-IXTN30N100L
Ultra Librarian 3D Model Ultra Librarian IXTN30N100L CAD Model

Description

The IXYS IXTN30N100L MOSFET is a discrete semiconductor product used in various electronic circuits.

  • FET Type: N-channel
  • Drain to Source Voltage (Vdss): 1000V
  • Continuous Drain Current (Id): 30A @ 25°C
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
  • Vgs(th) (Max) @ Id: 5.5V @ 250μA
  • Power Dissipation (Max): 800W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25V
  • Temperature Range for Operating: -55°C to 150°C (TJ)
  • Case/Package: SOT-227B

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