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Same model may have multiple batches, images only for reference.
IXTN32P60P Real Image
Same model may have multiple batches, images only for reference.

IXTN32P60P

Part No IXTN32P60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 600V 32A SOT227B / P-Channel 600 V 32A (Tc) 890W (Tc) Chassis Mount SOT-227B
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN32
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324123-IXTN32P60P
Ultra Librarian 3D Model Ultra Librarian IXTN32P60P CAD Model

Description

The IXYS component is a MOSFET (Metal Oxide) with a P-Channel FET type.

  • Manufacturer: IXYS
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Maximum Operating Temperature: 125°C
  • Minimum Operating Temperature: -55°C
  • Supply and Demand Status: unlimited MSL level 1
  • ROHS Compliance: ROHS3 compliant
  • Win Source Part Number: 1324123-IXTN32P60P

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