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Same model may have multiple batches, images only for reference.
IXTP01N100D Real Image
Same model may have multiple batches, images only for reference.

IXTP01N100D

Part No IXTP01N100D
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV .1A TO-220AB
Datasheet
IXTP01N100D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 100mA (Tc)
Max Input Capacitance 120pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 1.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 110 Ohm @ 50mA, 0V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040916-IXTP01N100D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP01N100D CAD Model

Description

The IXYS 040916-IXTP01N100D is a through-hole N-channel depletion mode MOSFET with a maximum drain-source breakdown voltage of 1000V and a continuous drain current of 100mA @ 25°C.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 100mA @ 25°C
  • Package: TO-220AB case
  • Maximum Power Dissipation: 1.1W (Ta), 25W (Tc)
  • Maximum Rds On: 110 Ohm @ 50mA, 0V
  • Maximum Input Capacitance: 120pF @ 25V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.8609 $61.7481
21+ $5.6294 $118.2174
32+ $5.4534 $174.5088
44+ $5.2776 $232.2144
57+ $5.1016 $290.7912
76+ $4.5740 $347.6240
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Availability: 9,800 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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