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IXTP08N100P

Part No IXTP08N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 800MA TO220AB / N-Channel 1000 V 800mA (Tc) 42W (Tc) Through Hole TO-220-3
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Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V
Power Dissipation (Max) 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXTP08
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1323977-IXTP08N100P
Ultra Librarian 3D Model Ultra Librarian IXTP08N100P CAD Model

Description

The IXTP08N100P is a N-channel MOSFET with a drain-source voltage of 1000V and a continuous drain current @ 25°C of 800mA (Tc).

  • Channel Type: N-channel
  • Drain-Source Voltage: 1000V
  • Continuous Drain Current: 800mA (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 50μA
  • Power Dissipation (Max): 42W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Applications: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8323 $64.1305
80+ $1.5035 $120.2800
120+ $1.4565 $174.7800
165+ $1.4096 $232.5840
215+ $1.3626 $292.9590
285+ $1.2215 $348.1275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,580 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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