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Same model may have multiple batches, images only for reference.
IXTP140N055T2 Real Image
Same model may have multiple batches, images only for reference.

IXTP140N055T2

Part No IXTP140N055T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 140A TO-220
Datasheet
IXTP140N055T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 4760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049863-IXTP140N055T2
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP140N055T2 CAD Model

Description

The IXYS 1049863-IXTP140N055T2 is an N-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 140A at 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 140A
  • Power Dissipation: 250W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 5.4 mOhm @ 50A, 10V
  • Case: TO-220-3

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27+ $4.2861 $115.7247
42+ $4.1521 $174.3882
58+ $4.0182 $233.0556
75+ $3.8843 $291.3225
100+ $3.4825 $348.2500
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Availability: 31,800 pieces
MOQ: 12 pcs
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