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IXTP160N085T

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Part No	IXTP160N085T
Manufacturer	IXYS
Catalog	FETs - Single
Description	Trench Gate Power MOSFET \| MOSFET N-CH 85V 160A TO-220
Sample
Rohs State
ECAD Module
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Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	85V
Id - Continuous Drain Current	160A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	6mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs	164nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	6400pF at 25V
Power Dissipation (Maximum)	360W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1191278-IXTP160N085T
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXTP160N085T CAD Model

Alternative Products

Description

The IXYS IXTP160N085T MOSFET from IXYS is a high power N-channel transistor designed for through hole mounting.

Drain-Source Breakdown Voltage: 85V
Continuous Drain Current: 160A
Maximum On-Resistance: 6mOhm @ 50A, 10V
Gate-Source Voltage Range: ±20V
Maximum Gate-Source Threshold Voltage: 4V @ 1mA
Package: TO-220AB
Power Dissipation: up to 360W
Input Capacitance: 6400pF @ 25V
Gate Charge: 164nC @ 10V
Obsolete product: with limited supply and demand status.
Suitable for use: in applications that require high power and low on-resistance.

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