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Same model may have multiple batches, images only for reference.
IXTP160N10T Real Image
Same model may have multiple batches, images only for reference.

IXTP160N10T

Part No IXTP160N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description TrenchMV Power MOSFET
Datasheet
IXTP160N10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchMV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 132nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 430W (Tc)
Rds On (Maximum) @ Id, Vgs 7 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1191279-IXTP160N10T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTP160N10T
Introduction Date December 20, 2006
ECCN EAR99
Country of Origin United States of America
Estimated EOL Date 2024
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP160N10T CAD Model

Description

IXTP160N10T is an N-channel MOSFET from IXYS.

  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 160A @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 132nC @ 10V
  • Input Capacitance: 6600pF @ 25V
  • Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 25A, 10V
  • Power Dissipation (maximum): 430W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220-3
  • Suitable for: Discrete semiconductor products

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61+ $1.6471 $100.4731
95+ $1.5956 $151.5820
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225+ $1.3382 $301.0950
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