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IXTP20N65X

Part No IXTP20N65X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20A TO220 / N-Channel 650 V 20A (Tc) 320W (Tc) Through Hole TO-220-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1390 pF @ 25 V
Power Dissipation (Max) 320W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXTP20
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1323973-IXTP20N65X
Ultra Librarian 3D Model Ultra Librarian IXTP20N65X CAD Model

Description

The IXYS IXTP20N65X is an N-channel MOSFET transistor with a drain-to-source voltage of 650V and a continuous drain current of 20A @ 25°C.

  • Channel Type: N-channel
  • Drain-to-Source Voltage: 650V
  • Continuous Drain Current: 20A @ 25°C
  • Maximum On-Resistance: 210mOhm @ 10A and 10V
  • Gate Threshold Voltage: 5.5V @ 250µA
  • Power Dissipation: 320W @ Tc
  • Gate Charge: 35nC @ 10V
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: IXYS

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7668 $58.6008
15+ $8.0139 $120.2085
23+ $7.7634 $178.5582
31+ $7.5130 $232.9030
40+ $7.2626 $290.5040
54+ $6.5112 $351.6048
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,970 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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