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Same model may have multiple batches, images only for reference.
IRFS9N60APBF Real Image
Same model may have multiple batches, images only for reference.

IRFS9N60APBF

Part No IRFS9N60APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9.2A D2PAK
Datasheet
IRFS9N60APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069596-IRFS9N60APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS9N60APBF CAD Model

Description

The Vishay MOSFET is a high-quality electronic component that is designed for use in discrete semiconductor products.

  • Power Dissipation: 170W
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 9.2A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 49nC @ 10V
  • Maximum Input Capacitance: 1400pF @ 25V
  • Case: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7014 $51.3266
40+ $2.5272 $101.0880
62+ $2.4400 $151.2800
89+ $2.2657 $201.6473
115+ $2.1786 $250.5390
144+ $2.0915 $301.1760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,970 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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